MBRX120 [BL Galaxy Electrical]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS; 表面贴装肖特基二极管
| 型号： | MBRX120 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL GALAXY ELECTRICAL
MBRX120 - - - MBRX1A0
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 - 100 V
CURRENT: 1.0 A
FEATURES
SOD - 123FL
◇ Low forward surge current
◇ Ideal for surface mouted applications
◇ Low leakage current
Cathode Band
Top View
2.8 0.1
MECHANICAL DATA
◇ Case:JEDEC SOD-123FL,molded plastic over
passivated chip
0.6 0.25
◇ Terminals:Solder Plated, solderable per
MIL-STD-750, Method 2026
◇ Polarity: Color band denotes cathode end
◇ Weight: 0.0008 ounces, 0.022 gram
◇ Mounting position: Any
3.7 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single hase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
ELECTRICAL CHARACTERISTICS
MBRX MBRX MBRX MBRX MBRX MBRX
120
S2
130
S3
30
140
S4
40
160
S6
60
180
S8
80
1A0
UNITS
Device marking code
SA
Maximum recurrent peak reverse voltage
Maximum RMS voltage
20
14
20
VRRM
VRMS
VDC
100
V
V
V
21
30
28
40
42
60
56
80
70
Maximum DC blocking voltage
Maximum average forword
rectified current TJ=90℃
Peak forward surge current 8.3ms single
half-sine-wave superimposed
on rated load
100
I(AV)
1.0
20
A
IFSM
A
Maximum instantaneous @IFM=1.0A
forward voltage
VF
IR
0.50
0.55
0.72
0.85
V
Repetitive peak reverse current
at rated DC blocking voltage
Typical junction capacitance
Operating temperature range
0.3
30
m A
CJ
Tj
p F
℃
- 55 --- + 125
- 55 --- + 150
Storage temperature range
TSTG
℃
NOTE1.Measured at f=1.0MHz,VR=4.0V
www.galaxycn.com
1.
Document Number 0281033
BLGALAXY ELECTRICAL
RATINGS AND CHARACTERISTIC CURVES
MBRX120 - - - MBRX1A0
FIG.1 -- FORWARD DERATING CURVE
FIG.2-- PEAK FORWARD SURGE CURRENT
1.25
1.0
20
0.75
Single Phase
Half Wave 60H
Resistive or
Inductive Load
Z
0.5
10
0.25
0
0
25
50
75
100
125 150
175
0
1
2
4
8
10
20
40 60 80 100
JUNCTION TEMPERATURE
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
MBRX120
MBRX160
100
TJ=125
10
MBRX130-MBRX140
1.0
0.1
MBRX180-MBRX1A0
TJ=25
.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5--TYPICAL JUNCTION CAPACITANCE
100
10
1
f = 1 MHz
Ta = 25°C
1
10
100
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
2.
Document Number 0281033
BLGALAXY ELECTRICAL
相关型号：
MBRX120-TP
Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC
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